Random Dopant Fluctuation Effects of Tunneling Field-Effect Transistors (TFETs)
نویسندگان
چکیده
منابع مشابه
Numerical Simulation of Random Dopant Fluctuation in Sub-65 nm Metal-Oxide-Semiconductor Field Effect Transistors
As the gate length of MOSFET devices shrinks down below 100 nm, the fluctuation of major devices parameter, namely, threshold voltage (VTH), subthreshold swing, drain current (ID) and subthreshold leakage current due to influences of processes variations becomes a serious problem. Random dopant fluctuation is one of the problems. In this work, we numerically examine the fluctuation effects of r...
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ژورنال
عنوان ژورنال: Journal of the Institute of Electronics and Information Engineers
سال: 2012
ISSN: 2287-5026
DOI: 10.5573/ieek.2012.49.12.179